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| savantic semiconductor product specification silicon npn power transistors 2SD531 d escription with to-220c package high current capability applications for audio frequency power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 90 v v ebo emitter-base voltage open collector 8 v i c collector current 5 a p c collector power dissipation t c =25 43 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SD531 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma; r be = 9 90 v v (br)cbo collector-base breakdown voltage i c =5ma; i e =0 100 v v (br)ebo emitter-base breakdown votage i e =5ma; i c =0 8 v v cesat collector-emitter saturation voltage i c =4a;i b =0.4 a 2.0 v i cbo collector cut-off current v cb =100v; i e =0 0.1 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe dc current gain i c =0.1a ; v ce =2v 60 downloaded from: http:/// savantic semiconductor product specification 3 silicon npn power transistors 2SD531 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm) downloaded from: http:/// |
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